✦ LIBER ✦
Plasma MBE growth conditions of AlGaN/GaN high-electron-mobility transistors on silicon and their device characteristics with epitaxially regrown ohmic contacts
✍ Scribed by Ganguly, Satyaki; Verma, Jai; Xing, Huili (Grace); Jena, Debdeep
- Book ID
- 126312902
- Publisher
- Institute of Pure and Applied Physics
- Year
- 2014
- Tongue
- English
- Weight
- 964 KB
- Volume
- 7
- Category
- Article
- ISSN
- 1882-0778
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