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Low voltage SILC and P- and N-MOSFET gate oxide reliability

✍ Scribed by C. Petit; A. Meinertzhagen; D. Zander; O. Simonetti; M. Fadlallah; T. Maurel

Book ID
104057807
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
438 KB
Volume
45
Category
Article
ISSN
0026-2714

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πŸ“œ SIMILAR VOLUMES

FinFET and MOSFET preliminary comparison
FinFET and MOSFET preliminary comparison of gate oxide reliability
✍ R. FernΓ‘ndez; R. RodrΓ­guez; M. NafrΓ­a; X. Aymerich; B. Kaczer; G. Groeseneken πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 286 KB

In this work, the influence of gate oxide reliability on N channel FinFET and MOSFET characteristics has been preliminary compared. For similar oxide damage, the results show that the oxide wear out has larger effects on the functionality of the FinFET than on the MOSFET.