FinFET and MOSFET preliminary comparison of gate oxide reliability

✍ Scribed by R. Fernández; R. Rodríguez; M. Nafría; X. Aymerich; B. Kaczer; G. Groeseneken

• Book ID: 104057931
• Publisher: Elsevier Science
• Year: 2006
• Tongue: English
• Weight: 286 KB
• Volume: 46
• Category: Article
• ISSN: 0026-2714
• DOI: 10.1016/j.microrel.2006.07.043

✦ Synopsis

In this work, the influence of gate oxide reliability on N channel FinFET and MOSFET characteristics has been preliminary compared. For similar oxide damage, the results show that the oxide wear out has larger effects on the functionality of the FinFET than on the MOSFET.