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Physical Understanding of Strain-Induced Modulation of Gate Oxide Reliability in MOSFETs

✍ Scribed by Irisawa, T.; Numata, T.; Toyoda, E.; Hirashita, N.; Tezuka, T.; Sugiyama, N.; Takagi, S.-i.

Book ID
114619176
Publisher
IEEE
Year
2008
Tongue
English
Weight
319 KB
Volume
55
Category
Article
ISSN
0018-9383

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