✦ LIBER ✦

Gate-oxide thickness dependence of hot-carrier-induced degradation in buried p-MOSFET's

✍ Scribed by Hiroki, A.; Odanaka, S.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Analysis on gate-oxide thickness depende

✍ Toyoshima, Y.; Iwai, H.; Matsuoka, F.; Hayashida, H.; Maeguchi, K.; Kanzaki, K. 📂 Article 📅 1990 🏛 IEEE 🌐 English ⚖ 716 KB

Analysis of gate oxide thickness hot car

✍ Doyle, B.S.; Mistry, K.R.; Cheng-Liang Huang 📂 Article 📅 1995 🏛 IEEE 🌐 English ⚖ 658 KB

Characterization of the gate oxide thick

✍ Y. Pan; K.K. Ng 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 532 KB

Characterization of hot carrier degradat

✍ R. Mahnkopf; G. Przyrembel; H. G. Wagemann 📂 Article 📅 1991 🏛 Springer 🌐 English ⚖ 811 KB

Characterization of hot carrier degradat

✍ Beitrag R. Mahnkopf; G. Przyrembel; H. G. Wagemann 📂 Article 📅 1991 🏛 Springer 🌐 English ⚖ 16 KB

Stress-bias dependence of hot-carrier-in

✍ Michael R. Trocino; Kuan-Yu Fu; Ker-Wen Teng 📂 Article 📅 1988 🏛 Elsevier Science 🌐 English ⚖ 266 KB