✦ LIBER ✦

Analysis on gate-oxide thickness dependence of hot-carrier-induced degradation in thin-gate oxide nMOSFET's

✍ Scribed by Toyoshima, Y.; Iwai, H.; Matsuoka, F.; Hayashida, H.; Maeguchi, K.; Kanzaki, K.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Gate-oxide thickness dependence of hot-c

✍ Hiroki, A.; Odanaka, S. 📂 Article 📅 1992 🏛 IEEE 🌐 English ⚖ 623 KB

Hot-carrier-induced degradation of drain

✍ J.M. Rafí; E. Simoen; K. Hayama; A. Mercha; F. Campabadal; H. Ohyama; C. Claeys 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 517 KB

Analysis of gate oxide thickness hot car

✍ Doyle, B.S.; Mistry, K.R.; Cheng-Liang Huang 📂 Article 📅 1995 🏛 IEEE 🌐 English ⚖ 658 KB

The dependence of MOSFET surface carrier

✍ Majkusiak, B.; Jakubowski, A. 📂 Article 📅 1986 🏛 IEEE 🌐 English ⚖ 484 KB

Characterization of the hot-electron-ind

✍ E Cartier 📂 Article 📅 1998 🏛 Elsevier Science 🌐 English ⚖ 382 KB

Direct lateral profiling of hot-carrier-

✍ Chun Chen; Tso-Ping Ma 📂 Article 📅 1998 🏛 IEEE 🌐 English ⚖ 241 KB