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Characterization of the gate oxide thickness and the channel length dependencies of hot-carrier degradation in LDD p-MOSFETs

✍ Scribed by Y. Pan; K.K. Ng

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Comparison of gate-edge effects on the h

✍ Y. Pan; K.K. Ng; V. Kwong 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 448 KB

A new gate current measurement technique

✍ S.E Leang; W.K Chim; D.S.H Chan 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 680 KB

Noise of hot carriers in the channel of

📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 128 KB