A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs

✍ Scribed by S.E Leang; W.K Chim; D.S.H Chan

• Publisher: Elsevier Science
• Year: 1995
• Tongue: English
• Weight: 680 KB
• Volume: 38
• Category: Article
• ISSN: 0038-1101
• DOI: 10.1016/0038-1101(94)00299-u