The behaviour of radiation-induced gate-oxide defects in MOSFETs during annealing at 140°C

✍ Scribed by M. Pejović; A. Jakšić; G. Ristić

• Book ID: 117149404
• Publisher: Elsevier Science
• Year: 1998
• Tongue: English
• Weight: 229 KB
• Volume: 240
• Category: Article
• ISSN: 0022-3093
• DOI: 10.1016/s0022-3093(98)00718-2