Modeling and characterization of gate oxide reliability
β Scribed by Lee, J.C.; Chen Ih-Chin; Hu Chenming
- Book ID
- 114538358
- Publisher
- IEEE
- Year
- 1988
- Tongue
- English
- Weight
- 1013 KB
- Volume
- 35
- Category
- Article
- ISSN
- 0018-9383
- DOI
- 10.1109/16.8802
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π SIMILAR VOLUMES
For future ULSIs, the oxide reliability problem is a key issue to realize low-power, highspeed devices whilst retaining its reliability. In the MOSFET structure, a gate oxide consists of the substrate/oxide interface, oxide and oxide/gate interface. Therefore, to improve oxide reliability, it is imp
In this work, the influence of gate oxide reliability on N channel FinFET and MOSFET characteristics has been preliminary compared. For similar oxide damage, the results show that the oxide wear out has larger effects on the functionality of the FinFET than on the MOSFET.