𝔖 Bobbio Scriptorium
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Modeling and characterization of gate oxide reliability

✍ Scribed by Lee, J.C.; Chen Ih-Chin; Hu Chenming


Book ID
114538358
Publisher
IEEE
Year
1988
Tongue
English
Weight
1013 KB
Volume
35
Category
Article
ISSN
0018-9383

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πŸ“œ SIMILAR VOLUMES


Oxide reliability improvement controllin
✍ Jiro Yugami πŸ“‚ Article πŸ“… 2000 πŸ› Elsevier Science 🌐 English βš– 359 KB

For future ULSIs, the oxide reliability problem is a key issue to realize low-power, highspeed devices whilst retaining its reliability. In the MOSFET structure, a gate oxide consists of the substrate/oxide interface, oxide and oxide/gate interface. Therefore, to improve oxide reliability, it is imp

FinFET and MOSFET preliminary comparison
✍ R. FernΓ‘ndez; R. RodrΓ­guez; M. NafrΓ­a; X. Aymerich; B. Kaczer; G. Groeseneken πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 286 KB

In this work, the influence of gate oxide reliability on N channel FinFET and MOSFET characteristics has been preliminary compared. For similar oxide damage, the results show that the oxide wear out has larger effects on the functionality of the FinFET than on the MOSFET.