๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Diagnostic technique for projecting gate oxide reliability and device reliability

โœ Scribed by Jong T. Park; Dae N. Ha; Chong G. Yu; Byung G. Park; Jong D. Lee

Book ID
108362225
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
208 KB
Volume
37
Category
Article
ISSN
0026-2714

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Impact of boron penetration on gate oxid
Impact of boron penetration on gate oxide reliability and device lifetime in p+-poly PMOSFETs
โœ B.Y. Kim; I.M. Liu; H.F. Luan; M. Gardner; J. Fulford; D.L. Kwong ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 257 KB

The effects of boron penetration on device performance and reliability of p+-poly PMOSFETs are investigated extensively with different RTA drive-in conditions. High drive-in temperature causes significant boron-penetration induced mobility degradation in P-MOSFETs, resulting degraded device performa