✦ LIBER ✦
Impact of boron penetration on gate oxide reliability and device lifetime in p+-poly PMOSFETs
✍ Scribed by B.Y. Kim; I.M. Liu; H.F. Luan; M. Gardner; J. Fulford; D.L. Kwong
- Book ID
- 104306444
- Publisher
- Elsevier Science
- Year
- 1997
- Tongue
- English
- Weight
- 257 KB
- Volume
- 36
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
✦ Synopsis
The effects of boron penetration on device performance and reliability of p+-poly PMOSFETs are investigated extensively with different RTA drive-in conditions. High drive-in temperature causes significant boron-penetration induced mobility degradation in P-MOSFETs, resulting degraded device performance. Boron penetration enhances charge trapping in oxide and interface state generation at Si/SiO2 interfaces under F-N stress. Gate oxide reliability and device lifetime in the PMOSFETs due to this degradation are systematically studied.