✦ LIBER ✦
Breakdown and reliability of p-MOS devices with stacked RPECVD oxide/nitride gate dielectric under constant voltage stress
✍ Scribed by Yi-Mu Lee; Yider Wu; Gerald Lucovsky
- Book ID
- 104057727
- Publisher
- Elsevier Science
- Year
- 2004
- Tongue
- English
- Weight
- 660 KB
- Volume
- 44
- Category
- Article
- ISSN
- 0026-2714
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