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Projecting gate oxide reliability and optimizing reliability screens

✍ Scribed by Moazzami, R.; Hu, C.

Book ID
111672007
Publisher
IEEE
Year
1990
Tongue
English
Weight
777 KB
Volume
37
Category
Article
ISSN
0018-9383

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In this work, the influence of gate oxide reliability on N channel FinFET and MOSFET characteristics has been preliminary compared. For similar oxide damage, the results show that the oxide wear out has larger effects on the functionality of the FinFET than on the MOSFET.