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Improvement of gate oxide reliability for tantalum-gate MOS devices using xenon plasma sputtering technology

✍ Scribed by Ushiki, T.; Kawai, K.; Mo-Chiun Yu; Shinohara, T.; Ino, K.; Morita, M.; Ohmi, T.


Book ID
114537480
Publisher
IEEE
Year
1998
Tongue
English
Weight
145 KB
Volume
45
Category
Article
ISSN
0018-9383

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