✦ LIBER ✦

Comparison of performance and reliability between MOSFETs with LPCVD gate oxide and thermal gate oxide

✍ Scribed by Ahn, J.; Ting, W.; Kwong, D.L.

Book ID: 114534789
Publisher: IEEE
Year: 1991
Tongue: English
Weight: 278 KB
Volume: 38
Category: Article
ISSN: 0018-9383
DOI: 10.1109/16.158737

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

FinFET and MOSFET preliminary comparison

FinFET and MOSFET preliminary comparison of gate oxide reliability

✍ R. Fernández; R. Rodríguez; M. Nafría; X. Aymerich; B. Kaczer; G. Groeseneken 📂 Article 📅 2006 🏛 Elsevier Science 🌐 English ⚖ 286 KB

In this work, the influence of gate oxide reliability on N channel FinFET and MOSFET characteristics has been preliminary compared. For similar oxide damage, the results show that the oxide wear out has larger effects on the functionality of the FinFET than on the MOSFET.

Study of the manufacturing feasibility o

Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide

✍ Momose, H.S.; Nakamura, S.-I.; Ohguro, T.; Yoshitomi, T.; Morifuji, E.; Morimoto 📂 Article 📅 1998 🏛 IEEE 🌐 English ⚖ 294 KB

The Effect of Gate Oxide Processes on th

The Effect of Gate Oxide Processes on the Performance of 4H-SiC MOSFETs and Gate-Controlled Diodes

✍ Wang, Y.; Tang, K.; Khan, T.; Koushik Balasubramanian, M.; Naik, H.; Wei Wang; C 📂 Article 📅 2008 🏛 IEEE 🌐 English ⚖ 840 KB

Impact of MOSFET gate oxide breakdown on

Impact of MOSFET gate oxide breakdown on digital circuit operation and reliability

✍ Kaczer, B.; Degraeve, R.; Rasras, M.; Van de Mieroop, K.; Roussel, P.J.; Groesen 📂 Article 📅 2002 🏛 IEEE 🌐 English ⚖ 173 KB

A comparison of CVD stacked gate oxide a

A comparison of CVD stacked gate oxide and thermal gate oxide for 0.5-μm transistors subjected to process-induced damage

✍ Hsing-Huang Tseng; Tobin, P.J.; Hayden, J.D.; Chang, K.-M.; Miller, J.W. 📂 Article 📅 1993 🏛 IEEE 🌐 English ⚖ 621 KB

The effect of silicon gate microstructur

The effect of silicon gate microstructure and gate oxide process on threshold voltage instabilities in p+-gate p-channel MOSFETs with fluorine incorporation

✍ Hsing-Huang Tseng; Tobin, P.J.; Baker, F.K.; Pfiester, J.R.; Evans, K.; Fejes, P 📂 Article 📅 1992 🏛 IEEE 🌐 English ⚖ 769 KB