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Study of the manufacturing feasibility of 1.5-nm direct-tunneling gate oxide MOSFETs: uniformity, reliability, and dopant penetration of the gate oxide

✍ Scribed by Momose, H.S.; Nakamura, S.-I.; Ohguro, T.; Yoshitomi, T.; Morifuji, E.; Morimoto, T.; Katsumata, Y.; Iwai, H.

No coin nor oath required. For personal study only.

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