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[IEEE International Electron Devices Meeting. IEDM Technical Digest - Washington, DC, USA (7-10 Dec. 1997)] International Electron Devices Meeting. IEDM Technical Digest - A study of hot-carrier degradation in n- and p-MOSFETs with ultra-thin gate oxides in the direct-tunneling regime

✍ Scribed by Momose, H.S.; Nakamura, S.-I.; Ohguro, T.; Yoshitomi, T.; Morifuji, E.; Morimoto, T.; Katsumata, Y.; Iwai, H.

Book ID: 121382335
Publisher: IEEE
Year: 1997
Weight: 295 KB
Edition: 1997
Category: Article
ISBN-13: 9780780341005
DOI: 10.1109/IEDM.1997.650422

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