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[IEEE International Electron Devices Meeting. IEDM Technical Digest - Washington, DC, USA (7-10 Dec. 1997)] International Electron Devices Meeting. IEDM Technical Digest - Accurate drain conductance modeling for distortion analysis in MOSFETs

✍ Scribed by van Langevelde, R.; Klaassen, F.M.

Book ID: 121189633
Publisher: IEEE
Year: 1997
Weight: 410 KB
Category: Article
ISBN-13: 9780780341005
DOI: 10.1109/IEDM.1997.650389

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