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[IEEE International Electron Devices Meeting. IEDM Technical Digest - Washington, DC, USA (7-10 Dec. 1997)] International Electron Devices Meeting. IEDM Technical Digest - Inverse modeling of MOSFETs using I-V characteristics in the subthreshold region

✍ Scribed by Lee, Z.K.; McIlrath, M.B.; Antoniadis, D.A.

Book ID: 120623116
Publisher: IEEE
Year: 1997
Weight: 400 KB
Category: Article
ISBN-13: 9780780341005
DOI: 10.1109/IEDM.1997.650475

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