A comparative study of gate direct tunneling and drain leakage currents in n-MOSFET's with sub-2 nm gate oxides

✍ Scribed by Yang, N.; Henson, W.K.; Wortman, J.J.

• Book ID: 114538259
• Publisher: IEEE
• Year: 2000
• Tongue: English
• Weight: 230 KB
• Volume: 47
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.853042