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A comparison of CVD stacked gate oxide and thermal gate oxide for 0.5-μm transistors subjected to process-induced damage
✍ Scribed by Hsing-Huang Tseng; Tobin, P.J.; Hayden, J.D.; Chang, K.-M.; Miller, J.W.
- Book ID
- 114535042
- Publisher
- IEEE
- Year
- 1993
- Tongue
- English
- Weight
- 621 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0018-9383
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