The effect of silicon gate microstructure and gate oxide process on threshold voltage instabilities in p+-gate p-channel MOSFETs with fluorine incorporation

✍ Scribed by Hsing-Huang Tseng; Tobin, P.J.; Baker, F.K.; Pfiester, J.R.; Evans, K.; Fejes, P.L.

• Book ID: 114534661
• Publisher: IEEE
• Year: 1992
• Tongue: English
• Weight: 769 KB
• Volume: 39
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.141235