Oxide reliability improvement controlling microstructures of substrate/oxide and oxide/gate interfaces

✍ Scribed by Jiro Yugami

• Publisher: Elsevier Science
• Year: 2000
• Tongue: English
• Weight: 359 KB
• Volume: 27
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.2000.0878

✦ Synopsis

For future ULSIs, the oxide reliability problem is a key issue to realize low-power, highspeed devices whilst retaining its reliability. In the MOSFET structure, a gate oxide consists of the substrate/oxide interface, oxide and oxide/gate interface. Therefore, to improve oxide reliability, it is important to control these three component structures individually. In this report, I will describe experiments to control structures of the above two interfaces using:

(1) a combination of a closed wet cleaning system and a load-lock oxidation system and (2) an ultra-thin film deposition CVD technique. By controlling these structures, the oxide reliability was improved. Moreover, the interface structure should be carefully controlled in high-k gate dielectrics in future devices.