✦ LIBER ✦

MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages

✍ Scribed by Kai Chen; H. Clement Wann; Jon Dunster; Ping K. Ko; Chenming Hu; Makoto Yoshida

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Temperature and field dependence of carr

✍ A.T. Wu; S.W. Lee; T.Y. Chan; V. Murali 📂 Article 📅 1992 🏛 Elsevier Science 🌐 English ⚖ 451 KB

Characterization of the gate oxide thick

✍ Y. Pan; K.K. Ng 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 532 KB

New observation and improvement in GIDL

✍ P.T. Lai; Xu Jingping; X. Zeng; Y.C. Cheng 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 394 KB

Threshold voltage models of the narrow-g

📂 Article 📅 1989 🏛 Elsevier Science 🌐 English ⚖ 133 KB

On the effect of gate oxide thickness up

📂 Article 📅 1974 🏛 Elsevier Science 🌐 English ⚖ 111 KB