✦ LIBER ✦
New observation and improvement in GIDL of n-MOSFETs with various kinds of N2O-based gate oxides under hot-carrier stress
✍ Scribed by P.T. Lai; Xu Jingping; X. Zeng; Y.C. Cheng
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 394 KB
- Volume
- 39
- Category
- Article
- ISSN
- 0038-1101
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