✦ LIBER ✦

Hot-carrier reliability of N- and P-channel mosfets with polysilicon and CVD tungsten-polycide gate

✍ Scribed by C.L. Lou; W.K. Chim; D.S.H. Chan; Y. Pan

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Comparison of gate-edge effects on the h

✍ Y. Pan; K.K. Ng; V. Kwong 📂 Article 📅 1994 🏛 Elsevier Science 🌐 English ⚖ 448 KB

Characterization of the gate oxide thick

✍ Y. Pan; K.K. Ng 📂 Article 📅 1995 🏛 Elsevier Science 🌐 English ⚖ 532 KB

New observation and improvement in GIDL

✍ P.T. Lai; Xu Jingping; X. Zeng; Y.C. Cheng 📂 Article 📅 1996 🏛 Elsevier Science 🌐 English ⚖ 394 KB

Noise of hot carriers in the channel of

📂 Article 📅 1978 🏛 Elsevier Science 🌐 English ⚖ 128 KB