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Low-temperature Si epitaxy on large-grained polycrystalline seed layers by electron–cyclotron resonance chemical vapor deposition

✍ Scribed by B. Rau; I. Sieber; J. Schneider; M. Muske; M. Stöger-Pollach; P. Schattschneider; S. Gall; W. Fuhs

No coin nor oath required. For personal study only.

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