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Epitaxial growth of B-doped Si on Si(100) by electron-cyclotron-resonance Ar plasma chemical vapor deposition in a SiH4–B2H6–H2 gas mixture without substrate heating

✍ Scribed by Abe, Yusuke; Sakuraba, Masao; Murota, Junichi

No coin nor oath required. For personal study only.

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