## Abstract A Ka‐band low noise amplifier (LNA) using three cascaded stages was designed and implemented in a standard 0.18 μm CMOS technology. The fabricated Ka‐band LNA achieves power gain (S21) above 12 dB from 30 to 32 GHz and a minimal noise figure of 5.2 dB at 31.5 GHz. The three cascaded sta
Low Frequency Noise Characterization of 0.18 μm Si CMOS Transistors
✍ Scribed by Boutchacha, T. ;Ghibaudo, G.
- Publisher
- John Wiley and Sons
- Year
- 1998
- Tongue
- English
- Weight
- 262 KB
- Volume
- 167
- Category
- Article
- ISSN
- 0031-8965
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