✦ LIBER ✦

Low frequency noise and random telegraph signals in 0.35μm silicon CMOS devices

✍ Scribed by O. Roux-dit-Buisson; G. Ghibaudo; J. Brini; C. Lohse; G. Guégan

Publisher: Elsevier Science
Year: 1993
Tongue: English
Weight: 259 KB
Volume: 22
Category: Article
ISSN: 0167-9317
DOI: 10.1016/0167-9317(93)90152-u

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

A 1.2-V fully integrated 2.4-GHz low-noi

A 1.2-V fully integrated 2.4-GHz low-noise amplifier in 0.35-μm CMOS technology

✍ C. C. Meng; M. H. Chiang; T. H. Wu 📂 Article 📅 2002 🏛 John Wiley and Sons 🌐 English ⚖ 314 KB

## Abstract A 1.2‐V fully integrated 0.35‐μm inductively degenerated common source CMOS low‐noise amplifier has been demonstrated at 2.4 GHz in this paper. A simple common source configuration can be operated at lower voltage and has lower output impedance when compared with a conventional high out

High-quality-factor (33) and high-resona

High-quality-factor (33) and high-resonant-frequency (35 GHz) spiral inductors fabricated in 0.25-μM mixed-signal/RF-CMOS technology

✍ Yo-Sheng Lin; Shen-Hong Wu; Hong-Wei Chiu; Shey-Shi Lu 📂 Article 📅 2004 🏛 John Wiley and Sons 🌐 English ⚖ 252 KB

## Abstract In this paper, we demonstrate a comprehensive analysis of the effects of the layout, temperature (from −50°C to 200°C), top‐metal‐layer thickness, and substrate impedance on the performances of high‐quality‐factor (__Q__ factor) and high‐resonant‐frequency (__f__~__SR__~) spiral inducto