## Abstract A two stage ultra wideband (UWB) amplifier is presented. This amplifier incorporates multiple bandwidth enhancing techniques and is implemented in Austria micro systems (AMS) 0.35 μm CMOS process technology. The amplifier consumes 39.5 mW of power, exhibits a maximum gain of 13 dB, has
A miniature low-power ultra-wideband low noise amplifier in 0.18 μm CMOS
✍ Scribed by Xin Guan; Cam Nguyen
- Publisher
- John Wiley and Sons
- Year
- 2011
- Tongue
- English
- Weight
- 515 KB
- Volume
- 21
- Category
- Article
- ISSN
- 1096-4290
No coin nor oath required. For personal study only.
✦ Synopsis
A 0.18-lm CMOS low-noise amplifier (LNA) operating over the entire ultrawideband (UWB) frequency range of 3.1-10.6 GHz, has been designed, fabricated, and tested. The UWB LNA achieves the measured power gain of 7.5 6 2.5 dB, minimum input matching of À8 dB, noise figure from 3.9 to 6.3 dB, and IIP3 from À8 to À1.9 dBm, while consuming only 9 mW over 3-10 GHz. It occupies only 0.55 Â 0.4 mm 2 without RF and DC pads. The design uses only two on-chip inductors, one of which is such small that could be replaced by a bonding wire. The gain, noise figure, and matching of the amplifier are also analyzed.
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