A 0.18-lm CMOS low-noise amplifier (LNA) operating over the entire ultrawideband (UWB) frequency range of 3.1-10.6 GHz, has been designed, fabricated, and tested. The UWB LNA achieves the measured power gain of 7.5 6 2.5 dB, minimum input matching of À8 dB, noise figure from 3.9 to 6.3 dB, and IIP3
Low cost ultra wideband amplifier in 0.35 μm CMOS process
✍ Scribed by Kuldip N. Modha; Barrie Hayes-Gill; Ian Harrison
- Publisher
- John Wiley and Sons
- Year
- 2008
- Tongue
- English
- Weight
- 358 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
A two stage ultra wideband (UWB) amplifier is presented. This amplifier incorporates multiple bandwidth enhancing techniques and is implemented in Austria micro systems (AMS) 0.35 μm CMOS process technology. The amplifier consumes 39.5 mW of power, exhibits a maximum gain of 13 dB, has input and output reflections below −9 and −10 dB, respectively over a −3 dB bandwidth of 4 GHz. The average measured noise figure is 6 dB and 1 dB compression point at 3 GHz is −12 dBm. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 1879–1881, 2008; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.23525
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