Liquid injection MOCVD and ALD of ZrO2 using Zr–cyclopentadienyl precursors

✍ Scribed by Jeffrey M. Gaskell; Anthony C. Jones; Kate Black; Paul R. Chalker; Thomas Leese; Andrew Kingsley; Rajesh Odedra; Peter N. Heys

• Publisher: Elsevier Science
• Year: 2007
• Tongue: English
• Weight: 268 KB
• Volume: 201
• Category: Article
• ISSN: 0257-8972
• DOI: 10.1016/j.surfcoat.2007.04.098

✦ Synopsis

Thin films of ZrO 2 have been deposited by liquid injection MOCVD and ALD using the cyclopentadienyl-based Zr precursors [(MeCp) 2 ZrMe (OMe)] and [(MeCp) 2 ZrMe(OBu t )]. Analysis by X-ray diffraction showed that films grown at low temperature (300 °C) by ALD were amorphous, whist films deposited at higher temperature (600 °C) by MOCVD exist in the tetragonal phase. Auger electron spectroscopy showed that residual carbon (1.4-7.0 at.%) was present in the oxide films and that the MOCVD-grown films contained more carbon contamination than those grown by ALD.