✦ LIBER ✦

MOCVD and ALD of High-ϰ Dielectric Oxides Using Alkoxide Precursors

✍ Scribed by Anthony C. Jones; Helen C. Aspinall; Paul R. Chalker; Richard J. Potter; Troy D. Manning; Yim Fun Loo; Ruairi O'Kane; Jeffrey M. Gaskell; Lesley M. Smith

Publisher: John Wiley and Sons
Year: 2006
Weight: 9 KB
Volume: 37
Category: Article
ISSN: 0931-7597
DOI: 10.1002/chin.200621220

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

MOCVD and ALD of High-k Dielectric Oxide

MOCVD and ALD of High-k Dielectric Oxides Using Alkoxide Precursors

✍ A. C. Jones; H. C. Aspinall; P. R. Chalker; R. J. Potter; T. D. Manning; Y. F. L 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 977 KB

MOCVD and ALD of CeO2 Thin Films using a

MOCVD and ALD of CeO2 Thin Films using a Novel Monomeric CeIV Alkoxide Precursor

✍ Jacqueline S. Wrench; Kate Black; Helen C. Aspinall; Anthony C. Jones; John Bacs 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 173 KB

Liquid injection MOCVD and ALD of ZrO2 u

Liquid injection MOCVD and ALD of ZrO2 using Zr–cyclopentadienyl precursors

✍ Jeffrey M. Gaskell; Anthony C. Jones; Kate Black; Paul R. Chalker; Thomas Leese; 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 268 KB

Thin films of ZrO 2 have been deposited by liquid injection MOCVD and ALD using the cyclopentadienyl-based Zr precursors [(MeCp) 2 ZrMe (OMe)] and [(MeCp) 2 ZrMe(OBu t )]. Analysis by X-ray diffraction showed that films grown at low temperature (300 °C) by ALD were amorphous, whist films deposited a

MOCVD of Strontium Tantalate Thin Films

MOCVD of Strontium Tantalate Thin Films Using Novel Bimetallic Alkoxide Precursors

✍ Michael J. Crosbie; Peter J. Wright; Hywel O. Davies; Anthony C. Jones; Timothy 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 260 KB 👁 2 views

Growth of HfO2 by Liquid Injection MOCVD

Growth of HfO2 by Liquid Injection MOCVD and ALD Using New Hafnium-Cyclopentadienyl Precursors

✍ R. O'Kane; J. Gaskell; A. C. Jones; P. R. Chalker; K. Black; M. Werner; P. Taech 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 650 KB

New Single-Source Precursors for the MOC

New Single-Source Precursors for the MOCVD of High-ϰ Dielectric Zirconium Silicates to Replace SiO2 in Semiconducting Devices.

✍ Stefan Zuercher; Marcus Morstein; Nicholas D. Spencer; Martin Lemberger; Anton B 📂 Article 📅 2010 🏛 John Wiley and Sons ⚖ 39 KB