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Investigation of Minority Carrier Diffusion Length in Multicrystalline Silicon by Quantitative Electron Beam Induced Current Mapping

โœ Scribed by Barhdadi, A.; Sivoththaman, S.; Barbe, M.; Rodot, M.; Maurice, J.L.


Book ID
120392992
Publisher
Trans Tech Publications, Ltd.
Year
1994
Tongue
English
Weight
672 KB
Volume
37-38
Category
Article
ISSN
1662-9779

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In this work the effect of aluminium treatment on the material and device properties of highly disordered multicrystalline silicon wafers is analysed using the light beam induced current method at different wavelengths. The results show an improvement of the diffusion length L measured on samples su