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Measurement of minority carrier lifetime and diffusion length in silicon epitaxial layers by means of the photo-current technique : J. Muller, H. Bernt and H. Reichl. Solid-St. Electron. 21, 999 (1978)


Publisher
Elsevier Science
Year
1979
Tongue
English
Weight
130 KB
Volume
19
Category
Article
ISSN
0026-2714

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