LBIC and diffusion length mapping applied to the investigation of gettering by aluminium diffusion in multicrystalline silicon
✍ Scribed by O. Porre; M. Stemmer; M. Pasquinelli
- Publisher
- Elsevier Science
- Year
- 1994
- Tongue
- English
- Weight
- 331 KB
- Volume
- 24
- Category
- Article
- ISSN
- 0921-5107
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✦ Synopsis
In this work the effect of aluminium treatment on the material and device properties of highly disordered multicrystalline silicon wafers is analysed using the light beam induced current method at different wavelengths. The results show an improvement of the diffusion length L measured on samples submitted to aluminium diffusion at 900 °C to 4 h. Owing to the low initial values of diffusion lengths measured on wafers containing a high density of crystallographic defects (grain boundaries, dislocations, etc.), we assume that the main cause of enhancement is the gettering effect. However, back surface field and back surface reflection can occur if the initial value of L approaches the thickness of the wafer.