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Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs

✍ Scribed by Faqir, M.; Verzellesi, G.; Meneghesso, G.; Zanoni, E.; Fantini, F.

Book ID
114619441
Publisher
IEEE
Year
2008
Tongue
English
Weight
428 KB
Volume
55
Category
Article
ISSN
0018-9383

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## Abstract High‐temperature effects on the electrical behavior of AlGaN/GaN HEMTs have been evaluated. dc measurements have been performed for different illumination and temperature conditions. The unpassivated devices present a good ohmic contact technology up to 550 Β°C in air. These high‐tempera