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Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation

✍ Scribed by Hyungtak Kim, ; Thompson, R.M.; Tilak, V.; Prunty, T.R.; Shealy, J.R.; Eastman, L.F.

Book ID
121380270
Publisher
IEEE
Year
2003
Tongue
English
Weight
258 KB
Volume
24
Category
Article
ISSN
0741-3106

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πŸ“œ SIMILAR VOLUMES

HighfTandfmaxAlGaN/GaN HFETs achieved by
HighfTandfmaxAlGaN/GaN HFETs achieved by using thin and high-Al-composition AlGaN barrier layers and Cat-CVD SiN passivation
✍ Higashiwaki, M. ;Onojima, N. ;Matsui, T. ;Mimura, T. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 409 KB

## Abstract We fabricated sub‐0.1 ΞΌm‐gate Al~0.4~Ga~0.6~N/GaN heterostructure field‐effect transistors (HFETs) with AlGaN barrier thicknesses of 4–10 nm. The devices were passivated with 2 nm‐thick SiN layers formed by catalytic chemical vapor deposition (Cat‐CVD). The Cat‐CVD SiN passivation great