✦ LIBER ✦

High Temperature RF Characterisation of SiN Passivated and Unpassivated AlGaN/GaN HFETs

✍ Scribed by Harrison, I. ;Clayton, N.W. ;Jeffs, N.J.

Publisher: John Wiley and Sons
Year: 2001
Tongue: English
Weight: 66 KB
Volume: 188
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200111)188:1<275::aid-pssa275>3.0.co;2-d

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

High-temperature performance of AlGaN/Ga

High-temperature performance of AlGaN/GaN HFETs and MOSHFETs

✍ D. Donoval; M. Florovič; D. Gregušová; J. Kováč; P. Kordoš 📂 Article 📅 2008 🏛 Elsevier Science 🌐 English ⚖ 206 KB

HighfTandfmaxAlGaN/GaN HFETs achieved by

HighfTandfmaxAlGaN/GaN HFETs achieved by using thin and high-Al-composition AlGaN barrier layers and Cat-CVD SiN passivation

✍ Higashiwaki, M. ;Onojima, N. ;Matsui, T. ;Mimura, T. 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 409 KB

## Abstract We fabricated sub‐0.1 μm‐gate Al~0.4~Ga~0.6~N/GaN heterostructure field‐effect transistors (HFETs) with AlGaN barrier thicknesses of 4–10 nm. The devices were passivated with 2 nm‐thick SiN layers formed by catalytic chemical vapor deposition (Cat‐CVD). The Cat‐CVD SiN passivation great

High temperature and high frequency char

High temperature and high frequency characteristics of AlGaN/GaN MOS-HFETs with photochemical vapor deposition SiO2 layer

✍ C.K. Wang; R.W. Chuang; S.J. Chang; Y.K. Su; S.C. Wei; T.K. Lin; T.K. Ko; Y.Z. C 📂 Article 📅 2005 🏛 Elsevier Science 🌐 English ⚖ 187 KB

RF performance assessment of AlGaN/GaN M

RF performance assessment of AlGaN/GaN MISHFET at high temperatures for improved power and pinch-off characteristics

✍ Ruchika Aggarwal; Anju Agrawal; Mridula Gupta; R. S. Gupta 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 451 KB

## Abstract An investigation of temperature model for an AlGaN/GaN MISHFET is presented and a relative comparison is done with conventional HFET structures. The proposed analytical model demonstrates its inherent ability to operate at higher temperature. The contributions from various temperature d