✦ LIBER ✦
High temperature and high frequency characteristics of AlGaN/GaN MOS-HFETs with photochemical vapor deposition SiO2 layer
✍ Scribed by C.K. Wang; R.W. Chuang; S.J. Chang; Y.K. Su; S.C. Wei; T.K. Lin; T.K. Ko; Y.Z. Chiou; J.J. Tang
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 187 KB
- Volume
- 119
- Category
- Article
- ISSN
- 0921-5107
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