## Abstract In this comparative study we investigate AlGaN/GaN‐based unpassivated and passivated HFETs and MOSHFETs with regards to DC‐, RF‐, and power‐performance. For optimal comparability, all devices emanate from the same wafer consisting of a SiC‐substrate, a 3 µm GaN‐ and a 30 nm Al~0.28~Ga~0
✦ LIBER ✦
High-temperature performance of AlGaN/GaN HFETs and MOSHFETs
✍ Scribed by D. Donoval; M. Florovič; D. Gregušová; J. Kováč; P. Kordoš
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 206 KB
- Volume
- 48
- Category
- Article
- ISSN
- 0026-2714
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