Room temperature photo-CVD SiO2layers on AlGaN and AlGaN/GaN MOS-HFETs

✍ Scribed by Wang, C. K. ;Chang, S. J. ;Su, Y. K. ;Chiou, Y. Z. ;Lin, T. K. ;Wong, C. C. ;Liu, H. L. ;Chang, S. P. ;Tang, J. J.

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 327 KB
• Volume: 203
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200521299

✦ Synopsis

Abstract

High quality SiO~2~ layers were successfully deposited onto AlGaN by photo‐chemical vapor deposition (photo‐CVD) using D~2~ lamp as the excitation source at room temperature. The resulting interface state density was only 8.86 × 10^11^ cm^–2^ eV^–1^. With a 2 µm gate, it was found that maximum drain–source current, maximum transconductance (g~m,max~) and gate voltage swing (GVS) of the fabricated nitride‐based metal–oxide–semiconductor heterostructure field effect transistors (MOS‐HFETs) were 225 mA/mm, 33 mS/mm and 6.5 V, respectively. Compared with metal‐semiconductor HFETs (MES‐HFETs), it was found that noise power density of MOS‐HFETs was lower and presented pure 1/f noise with smaller trapping effects. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)