HighfTandfmaxAlGaN/GaN HFETs achieved by using thin and high-Al-composition AlGaN barrier layers and Cat-CVD SiN passivation
✍ Scribed by Higashiwaki, M. ;Onojima, N. ;Matsui, T. ;Mimura, T.
- Publisher
- John Wiley and Sons
- Year
- 2006
- Tongue
- English
- Weight
- 409 KB
- Volume
- 203
- Category
- Article
- ISSN
- 0031-8965
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✦ Synopsis
Abstract
We fabricated sub‐0.1 μm‐gate Al~0.4~Ga~0.6~N/GaN heterostructure field‐effect transistors (HFETs) with AlGaN barrier thicknesses of 4–10 nm. The devices were passivated with 2 nm‐thick SiN layers formed by catalytic chemical vapor deposition (Cat‐CVD). The Cat‐CVD SiN passivation greatly increased electron density, and the effect became more significant with decreasing AlGaN barrier thickness. The HFETs had maximum drain current densities of 1.1–1.5 A/mm and peak extrinsic transconductances of 305–438 mS/mm. Peak current‐gain cutoff frequency of 163 GHz and maximum oscillation frequency of 192 GHz were obtained for the devices with 8 nm‐thick AlGaN barriers. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)