## Abstract In this paper, the structure and processing of AlGaN/GaN high electron mobility transistors have been optimized for maximum small signal gain at high frequencies. The effect of the gate resistance, gateβtoβdrain capacitance and output conductance on the power gain cutβoff frequency, __f
β¦ LIBER β¦
Optimization of field-plate AlGaN/GaN HFETs for high-voltage and high-frequency operation
β Scribed by Hoonsang Yoon; Hyungtak Kim
- Book ID
- 119991403
- Publisher
- The Korean Physical Society
- Year
- 2012
- Tongue
- English
- Weight
- 320 KB
- Volume
- 60
- Category
- Article
- ISSN
- 0374-4884
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