High-Temperature Operation of AlGaN/GaN HFET With a Low on-State Resistance, High Breakdown Voltage, and Fast Switching

✍ Scribed by Takehiko Nomura; Hiroshi Kambayashi; Mitsuru Masuda; Sonomi Ishii; Nariaki Ikeda; Jiang Lee; Seikoh Yoshida

• Book ID: 114618510
• Publisher: IEEE
• Year: 2006
• Tongue: English
• Weight: 472 KB
• Volume: 53
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2006.885532