High-power AlGaN/GaN HFET with lower on-state resistance and higher switching time for an inverter circuit

✍ Scribed by Yoshida, S.; Li, J.; Wada, T.; Takehara, H.

• Book ID: 114447994
• Publisher: The Institution of Electrical Engineers
• Year: 2004
• Tongue: English
• Weight: 915 KB
• Volume: 151
• Category: Article
• ISSN: 1350-2409
• DOI: 10.1049/ip-cds:20040458