Optimization of AlGaN/GaN HEMTs for high frequency operation

✍ Scribed by Palacios, T. ;Dora, Y. ;Chakraborty, A. ;Sanabria, C. ;Keller, S. ;DenBaars, S. P. ;Mishra, U. K.

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 371 KB
• Volume: 203
• Category: Article
• ISSN: 0031-8965
• DOI: 10.1002/pssa.200690013

✦ Synopsis

Abstract

In the article [1] featured at Editor's Choice, the structure and processing of AlGaN/GaN high electron mobility transistors (HEMTs) have been optimized for maximum small signal gain at high frequencies. The cover picture combines the sample structure – shown schematically and in a scanning electron microscopy image – with the band diagram of the sample with an InGaN back‐barrier used to increase the electron confinement in comparison to a standard HEMT.

The first author, Tomás Palacios, is currently a Project Scientist at UCSB. His research interest focuses on the search of novel GaN‐based transistors for mm‐wave applications and biological sensors. He is one of the winners of the physica status solidi Young Researcher Awards for his outstanding presentation at the 6th International Conference on Nitride Semiconductors held in Bremen, Germany, in 2005. Further articles from ICNS‐6 will also be published in phys. stat. sol. (b) 243, No. 7 (2006) and phys. stat. sol. (c) 3, No. 6 (2006).

The present issue of phys. stat. sol. (a) as well as phys. stat. sol. (c) 3, No. 5 (2006) also contain papers presented at the International Conference on Nanoscale Magnetism (ICNM‐2005) in Gebze, Turkey.