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High power GaN/AlGaN/GaN HEMTs operating at 2 to 25 GHz grown by plasma-assisted MBE

✍ Scribed by Manfra, M. J. ;Weimann, N. G. ;Mitrofanov, O. ;Waechtler, T. ;Tennant, D. M.


Publisher
John Wiley and Sons
Year
2003
Tongue
English
Weight
88 KB
Volume
200
Category
Article
ISSN
0031-8965

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